Display Abstract
Title Parallelization of a Boltzmann-Schr\"odinger-Poisson solver for 2D nano DG-MOSFET device
Name Jose Miguel J Mantas Ruiz
Country Spain
Email jmmantas@ugr.es
Co-Author(s) Francesco Vecil, Mar\'{\i}a J. C\'aceres, Carlos Sampedro, Andr\'es Godoy, Francisco G\'amiz
Submit Time 2014-02-27 17:14:46
Session
Special Session 121: Numerical techniques for the description of charged particles transport
Contents
The main characteristics of a parallel and distributed implementation of a fully deterministic solver for the Boltzmann-Schr\"odinger-Poisson system for partially-confined 2D Double Gate Metal Oxide Semiconductor Field Effect Transistors (DG-MOSFETs) are described. The numerical scheme is quite precise and presents several advantages compared to Monte-Carlo solvers. However, its computational implementation involves high demands for computational power due to the high dimensionality and the complexity of the collision operator. To overcome this inconvenience and make it possible to simulate 2D devices in reasonable times, the costliest parts of the numerical algorithm are parallelized for distributed-memory machines following a domain-decomposition approach. The parallel implementation uses functions of the Message-Passing Interface (MPI) to exchange data among the processes on the parallel platform, and of the Library of Iterative Solvers (LIS) to solve large sparse linear systems. We have chosen a data distribution strategy which enables a considerable reduction of the communication overheads because we perform almost no data movement at all for the main arrays of the solver being distributed among the processes. Several numerical experiments have been performed by simulating a DG-MOSFET devices on a SMP cluster in order to show and analyze the parallel performance of the solver.
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